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1. product profile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? logic-level compatible ? very fast switching ? trench mosfet technology ? aec-q101 qualified 1.3 applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb) , single-sided copper, tin-plated, mounting pad for drain 1 cm 2 . [2] pulse test: t p 300 s; ? 0.01. BSS138P 60 v, 360 ma n-channel trench mosfet rev. 1 ? 2 november 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t amb =25 c--60v v gs gate-source voltage t amb =25 c-- 20 v i d drain current t amb =25 c; v gs =10v [1] --360ma r dson drain-source on-state resistance t j =25 c; v gs =10v; i d = 300 ma [2] -0.91.6
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 2 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet 2. pinning information 3. ordering information 4. marking [1] * = placeholder for manufacturing site code 5. limiting values table 2. pinning pin symbol description simplified outline graphic symbol 1 g gate 2s source 3 d drain 12 3 s d g m bb076 table 3. ordering information type number package name description version BSS138P to-236ab plastic surface -mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] BSS138P an* table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t amb =25 c-60v v gs gate-source voltage t amb =25 c- 20 v i d drain current v gs =10v [1] t amb =25 c-360ma t amb =100 c-230ma i dm peak drain current t amb =25 c; single pulse; t p 10 s -1.2a
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 3 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet [1] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 1 cm 2 . [2] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. p tot total power dissipation t amb =25 c [2] -350mw [1] -420mw t sp =25 c - 1140 mw t j junction temperature 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c source-drain diode i s source current t amb =25 c [1] -360ma table 5. limiting values ?continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit fig 1. normalized total power dissipation as a function of ambient temperature fig 2. normalized continuous drain current as a function of ambient temperature t amb ( c) ? 75 175 125 25 75 ? 25 017aaa001 40 80 120 p der (%) 0 t amb ( c) ? 75 175 125 25 75 ? 25 017aaa002 40 80 120 i der (%) 0 p der p tot p tot 25 c () ----------------------- - 100 % = i der i d i d25 c () ------------------- - 100 % =
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 4 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 1 cm 2 . i dm = single pulse (1) t p = 100 s (2) t p =1ms (3) t p =10ms (4) t p = 100 ms (5) dc; t sp =25 c (6) dc; t amb =25 c; drain mounting pad 1 cm 2 fig 3. safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 017aaa111 10 ? 1 10 ? 2 1 10 i d (a) 10 ? 3 v ds (v) 10 ? 1 10 2 10 1 (1) (2) (3) (4) (5) (6) limit r dson = v ds /i d table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - 310 370 k/w [2] - 260 300 k/w r th(j-sp) thermal resistance from junction to solder point --115k/w
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 5 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet fr4 pcb, standard footprint fig 4. transient thermal impedance from junction to am bient as a function of pu lse duration; typical values fr4 pcb, mounting pad for drain 1 cm 2 fig 5. transient thermal impedance from junction to am bient as a function of pu lse duration; typical values 017aaa015 t p (s) 10 ? 3 10 2 10 3 10 1 10 ? 2 10 ? 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 017aaa016 t p (s) 10 ? 3 10 2 10 3 10 1 10 ? 2 10 ? 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 6 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet 7. characteristics [1] pulse test: t p 300 s; ? 0.01. table 7. characteristics t j =25 c unless otherwise specified. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =10 a; v gs =0v 60--v v gs(th) gate-source threshold voltage i d =250 a; v ds =v gs 0.9 1.2 1.5 v i dss drain leakage current v ds =60v; v gs =0v t j =25 c --1 a t j = 150 c --10 a i gss gate leakage current v gs = 20 v; v ds = 0 v - - 100 na r dson drain-source on-state resistance [1] v gs =5v; i d =50ma - 1 2 v gs =10v; i d =300ma - 0.9 1.6 g fs forward transconductance v ds =10v; i d = 200 ma [1] - 700 - ms dynamic characteristics q g(tot) total gate charge i d =300ma; v ds =30v; v gs =4.5v - 0.72 0.8 nc q gs gate-source charge - 0.14 - nc q gd gate-drain charge - 0.24 - nc c iss input capacitance v gs =0v; v ds =10v; f=1mhz - 3850pf c oss output capacitance - 7 - pf c rss reverse transfer capacitance -4-pf t d(on) turn-on delay time v ds =50v; r l =250 ; v gs =10v; r g =6 - 26ns t r rise time -3-ns t d(off) turn-off delay time - 9 20 ns t f fall time - 4 - ns source-drain diode v sd source-drain voltage i s =115ma; v gs = 0 v 0.47 0.75 1.1 v
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 7 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet t amb =25 ct amb =25 c; v ds =5v (1) minimum values (2) typical values (3) maximum values fig 6. output characteristics: drain current as a function of drain-source voltage; typical values fig 7. sub-threshold drain current as a function of gate-source voltage t amb =25 c (1) v gs =2.0v (2) v gs =2.5v (3) v gs =3.0v (4) v gs =3.5v (5) v gs =10v i d =300ma (1) t amb = 150 c (2) t amb =25 c fig 8. drain-source on-state resistance as a function of drain current; typical values fig 9. drain-source on-state resistance as a function of gate-source voltage; typical values v ds (v) 0.0 4.0 3.0 1.0 2.0 017aaa112 0.4 0.6 0.2 0.8 1.0 i d (a) 0.0 3.0 v 2.25 v 2.0 v 2.5 v 2.75 v v gs = 3.5 v 017aaa113 10 ? 4 10 ? 5 10 ? 3 i d (a) 10 ? 6 v gs (v) 0.0 2.0 1.5 0.5 1.0 (2) (1) (3) i d (a) 0.0 1.0 0.8 0.4 0.6 0.2 017aaa114 2.0 3.0 1.0 4.0 5.0 r dson ( ) 0.0 (2) (1) (3) (5) (4) v gs (v) 0.0 10.0 8.0 4.0 6.0 2.0 017aaa115 2.0 4.0 6.0 r dson ( ) 0.0 (1) (2)
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 8 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet v ds >i d r dson (1) t amb =25 c (2) t amb = 150 c fig 10. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 11. normalized drain-source on-state resistance as a function of ambien t temperature; typical values i d = 0.25 ma; v ds =v gs (1) maximum values (2) typical values (3) minimum values f=1mhz; v gs =0v (1) c iss (2) c oss (3) c rss fig 12. gate-source threshold voltage as a function of ambient temperature fig 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa116 v gs (v) 0.0 3.0 2.0 1.0 0.4 0.2 0.6 0.8 i d (a) 0.0 (1) (2) (2) (1) t amb ( c) ? 60 180 120 060 017aaa022 1.2 0.6 1.8 2.4 a 0.0 a r dson r dson 25 c () ----------------------------- = t amb ( c) ? 60 180 120 060 017aaa117 1.0 0.5 1.5 2.0 v gs(th) (v) 0.0 (2) (1) (3) 017aaa118 v ds (v) 10 ? 1 10 2 10 1 10 10 2 c (pf) 1 (2) (1) (3)
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 9 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet i d = 300 ma; v ds =30v; t amb =25 c fig 14. gate-source voltage as a function of gate charge; typical values fig 15. gate charge waveform definitions v gs =0v (1) t amb = 150 c (2) t amb =25 c fig 16. source current as a function of source-drain voltage; typical values q g (nc) 0.0 0.8 0.6 0.2 0.4 017aaa119 2.0 3.0 1.0 4.0 5.0 v gs (v) 0.0 003aaa50 8 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) v sd (v) 0.0 1.2 0.8 0.4 017aaa120 0.4 0.8 1.2 i s (a) 0.0 (1) (2)
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 10 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet 8. test information 8.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualificat ion for discrete semiconductors , and is suitable for use in automotive applications. fig 17. duty cycle definition t 1 t 2 p t 006aaa812 duty cycle = t 1 t 2
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 11 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet 9. package outline fig 18. package outline sot23 (to-236ab) unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 04-11-04 06-03-16 iec jedec jeita mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface-mounted package; 3 leads sot2 3
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 12 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet 10. soldering fig 19. reflow soldering footprint sot23 (to-236ab) fig 20. wave soldering footprint sot23 (to-236ab) solder lands solder resist occupied area solder paste sot023_ fr 0.5 (3 ) 0.6 (3 ) 0.6 (3 ) 0.7 (3 ) 3 1 3.3 2.9 1.7 1.9 2 dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_ fw 2.8 4.5 1.4 4.6 1.4 (2 ) 1.2 (2 ) 2.2 2.6 dimensions in mm
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 13 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet 11. revision history table 8. revision history document id release date data sheet status change notice supersedes BSS138P v.1 20101102 product data sheet - -
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 14 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BSS138P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 2 november 2010 15 of 16 nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BSS138P 60 v, 360 ma n-channel trench mosfet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 2 november 2010 document identifier: BSS138P please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 8.1 quality information . . . . . . . . . . . . . . . . . . . . . 10 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13 contact information. . . . . . . . . . . . . . . . . . . . . 15 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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